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Emerging Growth Opportunities

관리자   /   2024-04-22   /   4

 

 

 

 

Growth prospects for GaN molecular beam epitaxy

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MBE in GaN !

 

Following our successful presentation this week in CSI 2024 Brussels, we would like to stress again the unique benefits of MBE for nitrides applications !



RIBER addresses the unique characteristics required for GaN MBE with a range of nitride-specific MBE systems and components ; we have been active in the field since 2000 and propose solutions up to 200 mm wafers !

 

 

 Fully automated GaN system RIBER MBE 49

 

 

Emerging markets – AlN-on-Si templates, UV-C LEDs, 

And more !

 

 

Low temperature, sharp interface & high level of doping control, high Al or In content, high quality & reproducibility

 

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RIBER
31 rue Casimir Perier

95873 Bezons Cedex

Tel: +33 (0)1 39 96 65 03
Mail: info@riber.fr

 
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